Lithography process optimization and system
US7537870B2 · kind B2 · utility
6Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Jun 13, 2006 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Jan 12, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70191
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The first and second example embodiments are Pattern Fidelity Optimization Procedures for a Multiple Exposure Scheme. In the third example embodiment, the aperatures from the multiple exposure system can be combined into a single aperture by adding the apertures and modulating the relative transmission thru the respective apertures to match the prescribed dose split determined in above in the first embodiment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.