Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
US7538040B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2005 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Apr 15, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/742
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for patterning CNTs on a wafer wherein a CNT layer is provided on a substrate, a hard mask film is deposited on the CNT layer, a BARC layer (optional) is coated on the hard mask film, and a resist is patterned on the BARC layer (or directly on the hard mask film if the BARC layer is not included). Then, the resist pattern is effectively transferred to the hard mask film by etching the BARC layer (if provided) and etching partly into, but not entirely through, the hard mask film (i.e., etching is stopped before reaching the CNT layer) Then, the resist and the BARC layer (if provided) is stripped, and the hard mask pattern is effectively transferred to the CNTs by etching away (preferably by using Cl, F plasma) the portions of the hard mask which have been already partially etched away.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.