Method for forming an SOI structure with improved carrier mobility and ESD protection
US7538351B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2005 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Sep 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A semiconductor device and method for forming the same including improved electrostatic discharge protection for advanced semiconductor devices, the semiconductor device including providing semiconductor substrate having a pre-selected surface orientation and crystal direction; an insulator layer overlying the semiconductor substrate; a first semiconductor active region overlying the insulator layer having a first surface orientation selected from the group consisting of <100> and <110>; a second semiconductor active region extending through a thickness portion of the insulator layer having a second surface orientation selected from the group consisting of <110> and <100> different from the first surface orientation; wherein MOS devices including a first MOS device of a first conduction type is disposed on the first semiconductor active region and a second MOS device of a second conduction type is disposed on the second semiconductor active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.