Semiconductor device and power converter, driving inverter, general-purpose inverter and high-power high-frequency communication device using same
US7538352B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2003 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Aug 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device that uses a silicon carbide semiconductor substrate having p type, n type impurity semiconductor regions formed by ion implantation, the electrical characteristics of the end semiconductor device can be improved by decreasing the roughness of the silicon carbide semiconductor substrate surface. The semiconductor device of this invention is a Schottky barrier diode or a p-n type diode comprising at least one of a p type semiconductor region and n type semiconductor region selectively formed in a silicon carbide semiconductor region having an outermost surface layer surface that is a (000-1) surface or a surface inclined at an angle to the (000-1) surface, and a metal electrode formed on the outermost surface layer surface, that controls a direction in which electric current flows in a direction perpendicular to the outermost surface layer surface from application of a voltage to the metal electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.