Compound semiconductor FET

US7538364B2 · kind B2 · utility

Assignee

• SHARP KABUSHIKI KAISHA · JP

Inventor

• John Twynam · Regensburg, DE

Key dates

• Filing date: Jan 23, 2004
• Grant date: May 26, 2009
• Expiry date: Oct 22, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

On a substrate of a GaN FET, an undoped AlN layer, a GaN delta doped layer, an undoped GaN layer, and an undoped Al0.2Ga0.8N layer are formed in sequence. Arranged on the undoped Al0.2Ga0.8N layer are a Ti/Al/Pt/Au source ohmic electrode, a Pt/Au gate Schottky electrode, and a Ti/Al/Pt/Au drain ohmic electrode. Parallel conduction and gate leak are reduced or eliminated by the GaN delta doped layer.