PIN diode structure with zinc diffusion region
US7538403B2 · kind B2 · utility
1Cited by
0References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2005 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Dec 22, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/223
Abstract
A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, a first type window layer disposed over said intrinsic layer. An island shaped region of intrinsic material is disposed over the window layer and a dielectric layer disposed over the island region and at least the peripheral portion of said island shaped region whereby an opening is formed in the island shaped region. A dopant is diffused through the opening so as to form a PN junction that extends into the first layer of intrinsic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.