Erase and program method of flash memory device for increasing program speed of flash memory device
US7539057B2 · kind B2 · utility
12Cited by
7References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 21, 2005 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Sep 7, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5642
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Erase and program methods of a flash memory device including MLCs for increasing the program speed are described. In the erase method, MLCs are pre-programmed so that a voltage range in which threshold voltages of MLCs are distributed can be reduced. Therefore, a fail occurrence ratio can be reduced when erasing MLCs, the threshold voltage distribution of MLCs can be improved and an overall program time can be shortened in a subsequent program operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.