Precharge circuit of semiconductor memory apparatus
US7539064B2 · kind B2 · utility
3Cited by
2References
33Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 20, 2006 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Apr 28, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A precharge circuit of a semiconductor memory apparatus includes a first precharge unit and a second precharge unit. The first precharge unit applies a first core voltage to a pair of local input/output lines, in response to a first precharge signal, to precharge the pair of local input/output lines. The second precharge unit applies a clamp voltage, which is generated using a first supply voltage, to the pair of local input/output lines, in response to the first precharge signal, to precharge the pair of local input/output lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.