Method of forming film stack having under layer for preventing pinhole defects
US7541065B2 · kind B2 · utility
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2Claims
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Key dates
| Filing date | Jun 18, 2007 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | Jun 18, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31855
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is provided for forming a film stack in which a first film including a first polymer is formed on a substrate. A second film, which can include a second polymer other than the first polymer, is formed to have an inner surface disposed on the first film. The second film can have a thickness at which a free energy of the second film would be negative if the second film were disposed directly on the substrate. Desirably, the resulting second film is substantially free of dewetting defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.