Methods of forming magnetic memory devices including oxidizing and etching magnetic layers
US7541199B2 · kind B2 · utility
9Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2006 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | Apr 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Methods of forming a magnetic memory device include oxidizing a top magnetic layer using a conductive capping pattern as a mask. An etch selectivity between an oxidized portion of the top magnetic layer and a tunnel barrier layer may be relatively high. Using the tunnel barrier layer as an etch-stop layer, the oxidized portion of the top magnetic layer is selectively removed to form a top magnetic pattern, and to expose at least a portion of opposite sidewalls of the top magnetic pattern and the tunnel barrier layer. The unoxidized portion of the top magnetic layer forms a top magnetic pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.