Method for providing mixed stacked structures, with various insulating zones and/or electrically conducting zones vertically localized
US7541263B2 · kind B2 · utility
6Cited by
6References
57Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2005 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | Nov 4, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for producing a semiconducting structure on a semiconducting substrate, one surface of which has a topology, this method including:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.