Method of forming tungsten polymetal gate having low resistance
US7541269B2 · kind B2 · utility
7Cited by
2References
21Claims
0Family size
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Key dates
| Filing date | Mar 29, 2007 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | May 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/664
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A tungsten polymetal gate is made by forming a gate insulation layer and a polysilicon layer on a semiconductor substrate; depositing a barrier layer on the polysilicon layer; depositing a tungsten nucleation layer on the barrier layer through an ALD process; depositing a tungsten layer on the tungsten nucleation layer through a CVD process; depositing a hard mask layer on the tungsten layer; and etching the hard mask layer, the tungsten layer, the tungsten nucleation layer, the barrier layer, the polysilicon layer, and the gate insulation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.