Phase-change RAM and method for fabricating the same
US7541633B2 · kind B2 · utility
2Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2005 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | Jun 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A PRAM and a fabricating method thereof are provided. The PRAM includes a transistor and a data storage capability. The data storage capability is connected to the transistor. The data storage includes a top electrode, a bottom electrode, and a porous PCM layer. The porous PCM layer is interposed between the top electrode and the bottom electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.