Semiconductor device and method for manufacturing the same
US7541657B2 · kind B2 · utility
3Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2008 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | Jun 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a semiconductor device comprising a P-channel MIS transistor which includes an N-type semiconductor layer, a first gate insulating layer formed on the N-type semiconductor layer and containing a carbon compound of a metal, and an N-channel MIS transistor which includes a P-type semiconductor layer, a second gate insulating layer formed on the P-type semiconductor layer, and a second gate electrode formed on the second gate insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.