Methods of restoring data in flash memory devices and related flash memory device memory systems
US7542350B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2006 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | May 1, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3495
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods for setting a read voltage in a memory system which comprises a flash memory device and a memory controller for controlling the flash memory device, comprise sequentially varying a distribution read voltage to read page data from the flash memory device; constituting a distribution table having a data bit number and a distribution read voltage, the data bit number indicating an erase state among the page data respectively read from the flash memory device and the distribution read voltage corresponding to the read page data; detecting distribution read voltages corresponding to data bit numbers each indicating maximum points of possible cell states of a memory cell, based on the distribution table; and defining new read voltages based on the detected distribution read voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.