Semiconductor devices having a convex active region and methods of forming the same
US7544565B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2006 |
| Grant date | Jun 9, 2009 |
| Priority date | — |
| Expiry date | Dec 6, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a semiconductor device include forming a trench mask pattern on a semiconductor substrate having active regions and device isolation regions. A thermal oxidation process is performed using the trench mask pattern as a diffusion mask to form a thermal oxide layer defining a convex upper surface of the active regions. The thermal oxide layer and the semiconductor substrate are etched using the trench mask pattern as an etch mask to form trenches defining convex upper surfaces of the active regions. The trench mask pattern is removed to expose the convex upper surfaces of the active regions. Gate patterns are formed extending over the active regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.