Jae-Hwang Sim
61Patents
9h-index
51Co-inventors
77Inventor score
Filing activity: Dec 20, 2006 → Jan 11, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9166012B2 | Semiconductor memory devices including an air gap and methods of fabricating the same | Electricity | 458 | Active |
| US7544565B2 | Semiconductor devices having a convex active region and methods of forming the same | Electricity | 29 | Active |
| US8216947B2 | Methods of forming fine patterns in integrated circuit devices | Electricity | 21 | Active |
| US8142986B2 | Method of forming fine patterns of semiconductor device | Electricity | 18 | Active |
| US8368182B2 | Semiconductor devices including patterns | Electricity | 14 | Active |
| US8310055B2 | Semiconductor devices having narrow conductive line patterns and related methods of forming such semiconductor devices | Electricity | 11 | Active |
| US8629052B2 | Methods of forming semiconductor devices having narrow conductive line patterns | Electricity | 11 | Active |
| US8318603B2 | Method of forming patterns for semiconductor device | Electricity | 9 | Active |
| US9117654B2 | Methods of forming fine patterns in integrated circuit devices | Electricity | 9 | Active |
| US7968447B2 | Semiconductor device and methods of manufacturing the same | Electricity | 8 | Active |
| US8057692B2 | Methods of forming fine patterns in the fabrication of semiconductor devices | Electricity | 7 | Active |
| US8975684B2 | Methods of forming non-volatile memory devices having air gaps | Electricity | 6 | Active |
| US7816270B2 | Method of forming minute patterns in semiconductor device using double patterning | Electricity | 5 | Active |
| US9379123B2 | Semiconductor memory devices and methods of fabricating the same | Electricity | 5 | Active |
| US8921233B2 | Microelectronic fabrication methods using composite layers for double patterning | Electricity | 4 | Active |
| US8183152B2 | Method of fabricating semiconductor device | Emerging Cross-Sectional Technologies | 4 | Active |
| US8541284B2 | Method of manufacturing string floating gates with air gaps in between | Electricity | 4 | Active |
| US8969215B2 | Methods of fabricating semiconductor devices using double patterning technology | Electricity | 4 | Active |
| US8946804B2 | Semiconductor device and method of manufacturing the same | Electricity | 3 | Active |
| US9899323B2 | Integrated circuit device and method of manufacturing the same | Electricity | 3 | Active |
| US8697580B2 | Method of forming patterns for semiconductor device | Electricity | 3 | Active |
| US7521348B2 | Method of fabricating semiconductor device having fine contact holes | Electricity | 3 | Active |
| US8598710B2 | Semiconductor device with dummy contacts | Electricity | 3 | Active |
| US9099470B2 | Method of forming patterns for semiconductor device | Electricity | 2 | Active |
| US8741767B2 | Method of forming semiconductor device | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.