Non-uniform ion implantation
US7544957B2 · kind B2 · utility
11Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 26, 2006 |
| Grant date | Jun 9, 2009 |
| Priority date | — |
| Expiry date | Jul 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3171
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method includes receiving an input signal representative of a desired two-dimensional non-uniform dose pattern for a front surface of a workpiece, driving the workpiece relative to an ion beam to distribute the ion beam across the front surface of the workpiece, and controlling at least one parameter of an ion implanter when the ion beam is incident on the front surface of the workpiece to directly create the desired two-dimensional non-uniform dose pattern in one pass of the front surface of workpiece relative to the ion beam. The beam may be a scanned beam or a ribbon beam. An ion implanter is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.