Non-volatile memory device and methods of manufacturing and operating the same
US7544991B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2007 |
| Grant date | Jun 9, 2009 |
| Priority date | — |
| Expiry date | Jun 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A non-volatile memory device and methods of manufacturing and operating the same are provided. In a method of manufacturing a non-volatile memory device, a substrate having a stepped portion that may include a first horizontal face, a second horizontal face lower than the first horizontal face, and a vertical face connected between the first and second horizontal faces may be prepared. A first impurity region may be formed under the first horizontal face. A tunnel insulation layer may be continuously formed on the vertical face and the second horizontal face. A floating gate electrode having a tip higher than the first horizontal face may be formed on the tunnel insulation layer. A dielectric layer may be formed on the floating gate electrode. The floating gate electrode may be covered with a control gate electrode. A second impurity region horizontally spaced apart from the floating gate electrode may be formed under the second horizontal face.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.