Defect-free source/drain extensions for MOSFETS having germanium based channel regions
US7545003B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2007 |
| Grant date | Jun 9, 2009 |
| Priority date | — |
| Expiry date | Sep 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming defect-free source and drain extensions for a MOSFET built on a germanium based channel region deposits a first silicon germanium layer on a semiconductor substrate, deposits a gate dielectric layer on the silicon germanium layer, and deposits a gate electrode layer on the gate dielectric layer. A dry etch chemistry etches those layers to form a gate electrode, a gate dielectric, and a silicon germanium channel region on the semiconductor substrate. Next, an ion implantation process forms halo implant regions that consume portions of the silicon germanium channel region and the semiconductor substrate. Finally, an in-situ doped epitaxial deposition process grows a pair of silicon germanium layers having LDD regions. The silicon germanium layers are adjacent to the silicon germanium channel region and the halo implant regions do not damage any portion of the silicon germanium layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.