Wafer level package for surface acoustic wave device and fabrication method thereof
US7545017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2006 |
| Grant date | Jun 9, 2009 |
| Priority date | — |
| Expiry date | Apr 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/16195
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A wafer level package for a surface acoustic wave (SAW) device and a fabrication method thereof. The SAW device wafer level package includes a SAW device in which a SAW element is formed on a top surface of a device wafer, a cap wafer which is bonded with a top surface of the SAW device and has a viahole penetrating the cap wafer, and a conductive member to fill a part of the viahole. The viahole has a first via portion and a second via portion, the first via portion has a gradually smaller diameter from a bottom surface of the cap wafer until a certain depth, and the second via portion has a gradually greater diameter from the first via portion until a top surface of the cap wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.