Semiconductor device that suppresses variations in high frequency characteristics of circuit elements
US7545036B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2006 |
| Grant date | Jun 9, 2009 |
| Priority date | — |
| Expiry date | Sep 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate having a main surface, the main surface including a first and second areas formed with a high-frequency circuit element, and a third area located around the first and second areas and formed with a low-frequency circuit element. The semiconductor device also includes a sealing resin which covers the main surface; a plurality of first external terminals which are formed above the third area and which are electrically connected to the high-frequency circuit element, the first external terminals protruding from the surface of the sealing resin. The semiconductor device further includes a plurality of second external terminals which are formed above the third area and which are electrically connected to the low-frequency circuit element, the second external terminals protruding from the surface of the sealing resin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.