OKI Semiconductor Co., Ltd.
713Patents
661Active
713Granted
61Portfolio score
Filing activity: Feb 14, 1996 → Mar 19, 2012 · 613 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7811873B2 | Method for fabricating MOS-FET | Electricity | 98 | Active |
| US7666700B2 | Method for fabrication MEMS-resonator | Performing Operations; Transporting | 45 | Active |
| US7509859B2 | Acceleration sensor with redundant contact holes | Physics | 44 | Active |
| US7917733B2 | Instruction code compression using instruction codes with reuse flags | Physics | 40 | Active |
| US7508242B2 | Driving circuit that eliminates effects of ambient temperature variations and increases driving capacity | Electricity | 26 | Active |
| US8232783B2 | Constant-voltage power supply circuit | Physics | 25 | Active |
| US5646548A | Efficient method and resulting structure for integrated circuits with flexible I/O interface and power supply voltages | Electricity | 24 | Expired |
| US7600142B2 | Integrated circuit conserving power during transitions between normal and power-saving modes | Emerging Cross-Sectional Technologies | 23 | Active |
| US7576431B2 | Semiconductor chip package and multichip package | Electricity | 20 | Expired |
| US8039922B2 | Variable capacitor employing MEMS technology | Electricity | 20 | Active |
| US7944058B2 | Semiconductor device and process for fabricating the same | Electricity | 20 | Expired |
| US7649373B2 | Semiconductor integrated circuit with voltage drop detector | Physics | 20 | Active |
| US7662671B2 | Semiconductor device and method for manufacturing the same | Electricity | 19 | Active |
| US7663189B2 | Silicon-on-sapphire semiconductor device with shallow lightly-doped drain | Electricity | 17 | Active |
| US7571647B2 | Package structure for an acceleration sensor | Electricity | 17 | Expired |
| US8513778B2 | Semiconductor device | Electricity | 15 | Active |
| US7714619B2 | High-frequency clock detection circuit | Physics | 15 | Active |
| US7649249B2 | Semiconductor device, stacked structure, and manufacturing method | Electricity | 15 | Active |
| US7622394B2 | Method of fabricating semiconductor device including forming a protective layer and removing after etching a trench | Performing Operations; Transporting | 15 | Expired |
| US8063414B2 | Compact standard cell | Electricity | 14 | Active |
| US7560977B2 | Step-up booster circuit | Electricity | 13 | Active |
| US7568390B2 | Semiconductor acceleration sensor device and method for manufacturing the same | Electricity | 13 | Expired |
| US7581882B2 | Temperature sensor | Physics | 13 | Active |
| US7650787B2 | Acceleration sensor | Electricity | 13 | Active |
| US7905146B2 | Inertial sensor | Performing Operations; Transporting | 13 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.