Method and apparatus to measure threshold shifting of a MOSFET device and voltage difference between nodes
US7545161B2 · kind B2 · utility
7Cited by
17References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2007 |
| Grant date | Jun 9, 2009 |
| Priority date | — |
| Expiry date | Aug 24, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2621
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An on-chip circuit to quantitatively measure threshold voltage shifts of a MOSFET. The circuit includes a programmable Vt reference sensor; a programmable Vt monitoring sensor; and a comparator for receiving inputs from the reference and monitoring sensors providing an output flag signal. The shifting of the MOSFET device voltage threshold monitors process variations, geometry sensitivity, plasma damage, stress, and hot carriers and other device damages. The same circuit also measures voltage differences between any two nodes in an integrated circuit chip or wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.