Image sensor having a passivation layer exposing at least a main pixel array region and methods of fabricating the same
US7545423B2 · kind B2 · utility
7Cited by
21References
45Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 27, 2005 |
| Grant date | Jun 9, 2009 |
| Priority date | — |
| Expiry date | Oct 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A CMOS image sensor with improved sensitivity includes a main pixel array region of an active pixel array region formed on a semiconductor substrate. A passivation layer is formed over the sensor, and it is at least partially removed from the main pixel array region, such that incident light being detected by the main pixel array does not pass through the passivation layer. Optical absorption and refraction caused by the material of the passivation layer are eliminated, resulting in an image sensor with improved optical sensitivity.
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