Method for cleaning reaction container and film deposition system
US7546840B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2002 |
| Grant date | Jun 16, 2009 |
| Priority date | — |
| Expiry date | Mar 8, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
After semiconductor wafers are loaded into a reaction vessel, and ruthenium (Ru) film or ruthenium oxide film is formed, the interior of the reaction vessel is efficiently cleaned without contaminating the wafers. The interior of the reaction vessel is heated to a temperature of above 850° C. while the pressure inside the reaction vessel is reduced to, e.g., 133 pa (1 Torr)-13.3 Kpa (100 Torr), and oxygen gas is fed into the reaction vessel at a flow rate of, e.g., above 1.5 Lm, whereby the ruthenium film or the ruthenium oxide film formed inside the reaction vessel is cleaned off. In place of oxygen gas, active oxygen, such as O3, O* and OH*, etc. may be used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.