Ion implanter optimizer scan waveform retention and recovery
US7547460B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2001 |
| Grant date | Jun 16, 2009 |
| Priority date | — |
| Expiry date | Sep 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3045
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus are provided for controlling dose uniformity in an ion implantation system. According to one embodiment of the invention, an initial scan waveform is adjusted to obtain a desired uniformity for use in a first implant process, and the adjusted scan waveform is stored. The stored scan waveform is recalled and used in a second implant process. According to a another embodiment of the invention, desired beam parameters are identified and, based on the desired beam parameters, a stored scan waveform is recalled for use in a uniformity adjustment process, and the uniformity adjustment process is performed. According to a further embodiment of the invention, an apparatus is provided that includes a beam profiler for measuring a current distribution of a scanned ion beam. The apparatus also includes a data acquisition and analysis unit for adjusting an initial scan waveform based on a desired current distribution and the measured current distribution for use in a first implant process, storing the adjusted scan waveform, recalling the stored scan waveform, and using the recalled scan waveform in a second implant process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.