Defect identification system and method for repairing killer defects in semiconductor devices
US7547560B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2006 |
| Grant date | Jun 16, 2009 |
| Priority date | — |
| Expiry date | Dec 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76892
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for improving semiconductor yield by in-line repair of defects during manufacturing comprises inspecting dies on a wafer after a selected layer is formed on the dies, identifying defects in each of the dies, classifying the identified defects as killer or non-critical, for each killer defect determining an action to correct the defect, repairing the defect and returning the wafer to a next process step. Also disclosed is a method for determining an efficient repair process by dividing the die into a grid and using analysis of the grid to find a least invasive repair.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.