Oliver D. Patterson
30Patents
17h-index
45Co-inventors
81Inventor score
Filing activity: Oct 4, 1993 → Mar 30, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7474107B2 | Buried short location determination using voltage contrast inspection | Physics | 98 | Active |
| US7679083B2 | Semiconductor integrated test structures for electron beam inspection of semiconductor wafers | Electricity | 97 | Active |
| US7456636B2 | Test structures and method of defect detection using voltage contrast inspection | Physics | 92 | Expired |
| US7733109B2 | Test structure for resistive open detection using voltage contrast inspection and related methods | Electricity | 92 | Active |
| US7518190B2 | Grounding front-end-of-line structures on a SOI substrate | Electricity | 92 | Active |
| US8927989B2 | Voltage contrast inspection of deep trench isolation | Electricity | 86 | Active |
| US7772866B2 | Structure and method of mapping signal intensity to surface voltage for integrated circuit inspection | Electricity | 85 | Active |
| US8399266B2 | Test structure for detection of gap in conductive layer of multilayer gate stack | Electricity | 84 | Active |
| US8350583B2 | Probe-able voltage contrast test structures | Physics | 84 | Active |
| US8039837B2 | In-line voltage contrast detection of PFET silicide encroachment | Electricity | 76 | Active |
| US8750597B2 | Robust inspection alignment of semiconductor inspection tools using design information | Physics | 60 | Active |
| US9213060B2 | Probe-able voltage contrast test structures | Physics | 59 | Active |
| US9519210B2 | Voltage contrast characterization structures and methods for within chip process variation characterization | Electricity | 58 | Active |
| US9097760B2 | Probe-able voltage contrast test structures | Physics | 58 | Active |
| US9103875B2 | Probe-able voltage contrast test structures | Physics | 58 | Active |
| US8766259B2 | Test structure for detection of gap in conductive layer of multilayer gate stack | Electricity | 58 | Active |
| US5461559A | Hierarchical control system for molecular beam epitaxy | Physics | 30 | Expired |
| US7927895B1 | Varying capacitance voltage contrast structures to determine defect resistance | Electricity | 8 | Active |
| US7547560B2 | Defect identification system and method for repairing killer defects in semiconductor devices | Electricity | 4 | Active |
| US7732866B2 | Grounding front-end-of-line structures on a SOI substrate | Electricity | 4 | Active |
| US7397556B2 | Method, apparatus, and computer program product for optimizing inspection recipes using programmed defects | Physics | 2 | Active |
| US8841933B2 | Inspection tool and methodology for three dimensional voltage contrast inspection | Physics | 2 | Active |
| US8787074B2 | Static random access memory test structure | Electricity | 2 | Active |
| US6906538B2 | Alternating pulse dual-beam apparatus, methods and systems for voltage contrast behavior assessment of microcircuits | Physics | 1 | Expired |
| US10649026B2 | Apparatus for and method of net trace prior level subtraction | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.