Process and device for bonding wafers
US7547611B2 · kind B2 · utility
Inventor
Key dates
| Filing date | Dec 10, 2007 |
| Grant date | Jun 16, 2009 |
| Priority date | — |
| Expiry date | Jan 17, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a process and a device for bonding at least two substrates (1, 2), in particular semiconductor substrates or wafers, having the following features: a) a lower pressure plate (5) for holding the substrates (1, 2) and transferring pressure and, in particular, heat to the substrates (1, 2), b) an upper pressure plate (6) located opposite the lower pressure plate (5) for transferring pressure and, in particular, heat to the substrates (1, 2), c) heating means (7, 8) for heating up the substrates (1, 2), in particular to temperatures above 250° C., and d) pressure charging means, in particular an actuator (9), for charging the lower (5) and/or upper pressure plate (6) with a pressing force F, in particular higher than 500 N, preferably higher than 1,000 N. According to the invention, the upper pressure plate (6) and/or the lower pressure plate (5) are substantially free from the chemical elements Ti and Mo at least on one substrate contact surface (5o, 6o) facing the substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.