Power semiconductor module
US7547966B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2007 |
| Grant date | Jun 16, 2009 |
| Priority date | — |
| Expiry date | Dec 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M7/003
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor module with its thermal resistance and overall size reduced. Insulating substrates with electrode metal layers disposed thereon are joined to both the surfaces of a power semiconductor chip by using, for example, soldering. Metal layers are disposed also on the reverse surfaces of the insulating substrates and the metal layers are joined to the heat spreaders by using brazing. Heat radiating fins are provided on the heat radiating surface of at least one of the heat spreaders. The heat radiating side of each of the heat spreaders is covered by a casing to form a refrigerant chamber through which refrigerant flows to remove heat transmitted from the semiconductor chip to the heat spreader.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.