Patent · US Active

Device for reading out a memory cell including a regulating circuit with parallel switching elements, and method

US7548474B2 · kind B2 · utility

3Cited by

4References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Edvin Paparisto · Munich, DE
Stephan Rogl · Vilsheim, DE

Key dates

Filing date	Jun 1, 2006
Grant date	Jun 16, 2009
Priority date	—
Expiry date	Jun 1, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG11C7/12
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method for reading out a memory cell, and a device to be used for reading out a memory cell. In one embodiment, the device includes a first circuit and a second circuit for regulating a voltage present at a line that is adapted to be connected with the memory cell to a predetermined value, wherein said first circuit includes a switching element, and wherein said first circuit is configured such that said switching element is switched on during a first regulating phase and is switched off during a second regulating phase.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.