Trench structure and method for co-alignment of mixed optical and electron beam lithographic fabrication levels
US7550361B2 · kind B2 · utility
0Cited by
23References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2007 |
| Grant date | Jun 23, 2009 |
| Priority date | — |
| Expiry date | Jun 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for aligning a first set of features of a fabrication level of an integrated circuit chip to an electron beam alignment target formed in a substrate and forming the first set of features using electron beam lithography and for aligning a second set of features of the same fabrication level of the integrated circuit chip to an optical alignment target formed in the substrate and forming the second set of features using photolithography, the optical alignment target itself is aligned to the electron beam alignment target. Also a method of forming and a structure of the electron beam alignment target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.