Methods of performing a photolithography process for forming asymmetric patterns and methods of forming a semiconductor device using the same
US7550383B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2005 |
| Grant date | Jun 23, 2009 |
| Priority date | — |
| Expiry date | Jan 1, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/705
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There are provided methods of performing a photolithography process for forming asymmetric semiconductor patterns and methods of forming a semiconductor device using the same. These methods provide a way of forming asymmetric semiconductor patterns on a photoresist layer through two exposure processes. To this end, a semiconductor substrate is prepared. A planarized insulating interlayer and a photoresist layer are sequentially formed on the overall surface of the semiconductor substrate. A first semiconductor pattern of a photolithography mask is transferred to the photoresist layer, thereby forming a photoresist pattern on the photoresist layer. A second semiconductor pattern of a second photolithography mask is continuously transferred to the photoresist layer, thereby forming a second photoresist pattern on the photoresist layer. An etching process is performed on the planarized insulating interlayer to expose the semiconductor substrate, using the first photoresist pattern and the second photoresist pattern as etch masks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.