Amine-free deposition of metal-nitride films

US7550385B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Adrien LaVoie · Newberg, US
• Valery M. Dubin · Portland, US
• Juan E. Dominguez · Portland, US
• Kevin P. O'Brien · Cincinnati, US
• Steven W. Johnston · Portland, US
• John D. Peck · Arlington Heights, US
• David Thompson · San Jose, US
• David W. Peters · Albuquerque, US

Key dates

• Filing date: Sep 30, 2005
• Grant date: Jun 23, 2009
• Expiry date: Apr 5, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.