Light emitting device with filled tetrahedral (FT) semiconductor in the active layer
US7550779B2 · kind B2 · utility
2Cited by
1References
15Claims
0Family size
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Key dates
| Filing date | Sep 9, 2008 |
| Grant date | Jun 23, 2009 |
| Priority date | — |
| Expiry date | Sep 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3412
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or −1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.