Varied impurity profile region formation for varying breakdown voltage of devices
US7550787B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2005 |
| Grant date | Jun 23, 2009 |
| Priority date | — |
| Expiry date | Feb 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/642
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are disclosed for forming a varied impurity profile for a collector using scattered ions while simultaneously forming a subcollector. In one embodiment, the invention includes: providing a substrate; forming a mask layer on the substrate including a first opening having a first dimension; and substantially simultaneously forming through the first opening a first impurity region at a first depth in the substrate (subcollector) and a second impurity region at a second depth different than the first depth in the substrate. The breakdown voltage of a device can be controlled by the size of the first dimension, i.e., the distance of first opening to an active region of the device. Numerous different sized openings can be used to provide devices with different breakdown voltages using a single mask and single implant. A semiconductor device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.