Silicon wafer laser processing method and laser beam processing machine
US7553777B2 · kind B2 · utility
1Cited by
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4Claims
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Key dates
| Filing date | Oct 4, 2005 |
| Grant date | Jun 30, 2009 |
| Priority date | — |
| Expiry date | Dec 5, 2026 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/50
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A silicon wafer laser processing method for forming a deteriorated layer along dividing lines formed on a silicon wafer in the inside of the silicon wafer by applying a laser beam along the dividing lines, wherein the wavelength of the laser beam is set to 1,100 to 2,000 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.