Trench MOSFET technology for DC-DC converter applications
US7557395B2 · kind B2 · utility
8Cited by
11References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2004 |
| Grant date | Jul 7, 2009 |
| Priority date | — |
| Expiry date | Jun 7, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/901
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A trench power semiconductor device including a recessed termination structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.