Trench isolation type semiconductor device and related method of manufacture
US7557415B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2007 |
| Grant date | Jul 7, 2009 |
| Priority date | — |
| Expiry date | Aug 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and related method of manufacture are disclosed. The device comprises; a trench having a corner portion formed in the semiconductor substrate, a first oxide film formed on an inner wall of the trench and having an upper end portion exposing the corner portion of the semiconductor substrate, a nitride liner formed on the first oxide film, a second oxide film formed in contact with the upper end of the first oxide film and on the exposed corner portion and an upper surface of the semiconductor substrate, a field insulating film formed on the nitride liner to substantially fill the trench, and a field protecting film formed in contact with the second oxide film and filling a trench edge recess formed between the field insulating film and the second oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.