System and method for determining the state of a film in a plasma reactor using an electrical property
US7557591B2 · kind B2 · utility
5Cited by
12References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 28, 2003 |
| Grant date | Jul 7, 2009 |
| Priority date | — |
| Expiry date | May 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention describes a system and method for monitoring a material film within a plasma processing device. The system includes a plasma reactor formed by a reactor wall and an electrode, a RF generator to couple electrical energy to the electrode, an electrical measurement device for measuring an electrical property of the plasma processing device, and a controller coupled to the electrical measurement device and programmed to determine a state of a film on the reactor wall based on the measured electrical property.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.