Methods of making lateral junction field effect transistors using selective epitaxial growth
US7560325B1 · kind B1 · utility
7Cited by
1References
29Claims
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Key dates
| Filing date | Apr 14, 2008 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Apr 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
Methods of making a semiconductor device such as a lateral junction field effect transistor (JFET) are described. The methods are self-aligned and involve selective epitaxial growth using a regrowth mask material to form the gate or the source/drain regions of the device. The methods can eliminate the need for ion implantation. The device can be made from a wide band-gap semiconductor material such as SiC. The regrowth mask material can be TaC. The devices can be used in harsh environments including applications involving exposure to radiation and/or high temperatures.
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