Method for creating narrow trenches in dielectric materials
US7560357B2 · kind B2 · utility
0Cited by
8References
19Claims
0Family size
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Inventor
Key dates
| Filing date | Sep 15, 2006 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Feb 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing narrow trenches in semiconductor devices. The narrow trenches are formed by chemically changing the properties of a first dielectric layer locally, such that the side walls of a patterned hole in the first dielectric layer is converted locally and becomes etchable by a first etching substance. Subsequently a second dielectric material is deposited in the patterned structure and the damaged part of the first dielectric material is removed such that small trenches are obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.