Method for fabricating semiconductor element
US7560389B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 8, 2006 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Nov 30, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76202
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor element on a semiconductor substrate having a support substrate and a semiconductor layer above the support substrate. The method includes preparing the semiconductor substrate having a transistor formation region and an element isolation region both defined thereon; forming a pad oxide film on the semiconductor layer of the semiconductor substrate; forming an oxidation-resistant mask layer on the pad oxide film; forming a resist mask to cover the transistor formation region on the oxidation-resistant mask layer; performing a first etching process for etching the oxidation-resistant mask layer using the resist mask as a mask to expose the pad oxide film of the element isolation region; and removing the resist mask and oxidizing the semiconductor layer below the exposed pad oxide film by LOCOS using the exposed oxidation-resistant mask layer as a mask to form an element isolation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.