Phase change material with filament electrode
US7560721B1 · kind B1 · utility
22Cited by
0References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2008 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Feb 21, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention, in one embodiment, provides a memory device that includes a phase change memory cell; a first electrode; and a layer of filamentary resistor material positioned between the phase change memory cell and the first electrode, wherein at least one bistable conductive filamentary pathway is present in at least a portion of the layer of filamentary resistor material that provides electrical communication between the phase change memory cell and the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.