Eric A. Joseph
94Patents
12h-index
91Co-inventors
87Inventor score
Filing activity: Aug 24, 2001 → Sep 27, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9114438B2 | Copper residue chamber clean | Electricity | 183 | Active |
| US9493879B2 | Selective sputtering for pattern transfer | Electricity | 132 | Active |
| US6624068B2 | Polysilicon processing using an anti-reflective dual layer hardmask for 193 nm lithography | Electricity | 52 | Expired |
| US8338225B2 | Method to reduce a via area in a phase change memory cell | Electricity | 29 | Active |
| US7560721B1 | Phase change material with filament electrode | Physics | 22 | Active |
| US8138028B2 | Method for manufacturing a phase change memory device with pillar bottom electrode | Electricity | 21 | Active |
| US6803661B2 | Polysilicon processing using an anti-reflective dual layer hardmask for 193 nm lithography | Electricity | 17 | Expired |
| US8871107B2 | Subtractive plasma etching of a blanket layer of metal or metal alloy | Electricity | 13 | Active |
| US8633117B1 | Sputter and surface modification etch processing for metal patterning in integrated circuits | Electricity | 13 | Active |
| US8105859B2 | In via formed phase change memory cell with recessed pillar heater | Electricity | 13 | Active |
| US9799519B1 | Selective sputtering with light mass ions to sharpen sidewall of subtractively patterned conductive metal layer | Electricity | 13 | Active |
| US7485487B1 | Phase change memory cell with electrode | Electricity | 13 | Active |
| US8728859B2 | Small footprint phase change memory cell | Electricity | 12 | Active |
| US8471236B2 | Flat lower bottom electrode for phase change memory cell | Electricity | 11 | Active |
| US7910911B2 | Phase change memory with tapered heater | Electricity | 10 | Active |
| US8809828B2 | Small footprint phase change memory cell | Electricity | 9 | Active |
| US8431486B2 | Interconnect structure for improved time dependent dielectric breakdown | Electricity | 9 | Active |
| US8426967B2 | Scaled-down phase change memory cell in recessed heater | Electricity | 8 | Active |
| US9786550B2 | Low resistance metal contacts to interconnects | Electricity | 8 | Active |
| US9786597B2 | Self-aligned pitch split for unidirectional metal wiring | Electricity | 8 | Active |
| US8030130B2 | Phase change memory device with plated phase change material | Electricity | 8 | Active |
| US8283650B2 | Flat lower bottom electrode for phase change memory cell | Electricity | 7 | Active |
| US7960203B2 | Pore phase change material cell fabricated from recessed pillar | Electricity | 7 | Active |
| US8288236B2 | Field effect transistor having nanostructure channel | Electricity | 7 | Active |
| US9705077B2 | Spin torque MRAM fabrication using negative tone lithography and ion beam etching | Electricity | 7 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.