Nonvolatile memory device and method of fabricating the same
US7560765B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2007 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Mar 1, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/685
Abstract
A nonvolatile memory device includes a semiconductor substrate; a source region that is formed in the semiconductor substrate; a gate insulating film that is formed so as to partially overlap the source region on the semiconductor substrate; a floating gate that is formed on the gate insulating film so as to have a structure forming a uniform electric field in the portion that overlaps the source region; a control gate that is formed so as to be electrically isolated along one sidewall of the floating gate from an upper part of the floating gate, an inter-gate insulating film that is interposed between the floating gate and the control gate, and a drain region that is formed so as to be adjacent the other side of the control gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.