Jae-Min Yu
24Patents
7h-index
47Co-inventors
69Inventor score
Filing activity: Sep 1, 1998 → Dec 8, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6159799A | Method of manufacturing semiconductor device comprising high voltage regions and floating gates | Electricity | 23 | Expired |
| US6797579B2 | Semiconductor device having trench isolation structure and method of fabricating the same | Electricity | 13 | Expired |
| US6255155A | Nonvolatile memory and method for fabricating the same | Electricity | 12 | Expired |
| US6740933B2 | Semiconductor device having trench isolation structure and method of fabricating the same | Electricity | 11 | Expired |
| US6479346B1 | Semiconductor memory device and fabrication method thereof | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6069383A | Flash memory and method for fabricating the same | Electricity | 9 | Expired |
| US6384449B2 | Nonvolatile memory and method for fabricating the same | Electricity | 7 | Expired |
| US6255170A | Flash memory and method for fabricating the same | Electricity | 4 | Expired |
| US6800525B2 | Method of manufacturing split gate flash memory device | Electricity | 4 | Expired |
| US6897115B2 | Method of fabricating non-volatile memory device | Electricity | 4 | Expired |
| US7205194B2 | Method of fabricating a flash memory cell | Electricity | 4 | Expired |
| US7115470B2 | Methods of fabricating flash memory cell having split-gate structure using spacer oxidation process | Electricity | 4 | Expired |
| US6890820B2 | Method of fabricating FLASH memory devices | Electricity | 2 | Expired |
| US6974748B2 | Semiconductor device with split gate electrode structure and method for manufacturing the semiconductor device | Electricity | 1 | Expired |
| US6885070B2 | Semiconductor memory device and fabrication method thereof | Emerging Cross-Sectional Technologies | 1 | Expired |
| US10666096B2 | Direct cooling driving motor for vehicle | Emerging Cross-Sectional Technologies | 1 | Active |
| US7932149B2 | Method of manufacturing a semiconductor device | Electricity | 1 | Active |
| US7375391B2 | Semiconductor device with split gate electrode structure and method for manufacturing the semiconductor device | Electricity | 0 | Expired |
| US6924505B2 | Semiconductor device having a measuring pattern and a method of measuring the semiconductor device using the measuring pattern | Electricity | 0 | Expired |
| US7560765B2 | Nonvolatile memory device and method of fabricating the same | Electricity | 0 | Active |
| US10886798B2 | Stator support member of rotating electrical machine and method of manufacturing the same | Electricity | 0 | Active |
| US11605999B2 | Stator for drive motor | Electricity | 0 | Active |
| US10554108B2 | Resolver stator having multilayered core | Electricity | 0 | Active |
| US7195933B2 | Semiconductor device having a measuring pattern and a method of measuring the semiconductor device using the measuring pattern | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.