Method for forming a mixed voltage circuit having complementary devices
US7560779B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2003 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Aug 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0181
Abstract
A mixed voltage circuit is formed by providing a substrate (12) having a first region (20) for forming a first device (106), a second region (22) for forming a second device (108) complementary to the first device (106), and a third region (24) for forming a third device (110) that operates at a different voltage than the first device (106). A gate layer (50) is formed outwardly of the first, second, and third regions (20, 22, 24). While maintaining a substantially uniform concentration of a dopant type (51) in the gate layer (50), a first gate electrode (56) is formed in the first region (20), a second gate electrode (58) is formed in the second region (22), and a third gate electrode (60) is formed in the third region (24). The third region (24) is protected while implanting dopants (72) into the first region (20) to form source and drain features (74) for the first device (106). The first region (20) is protected while implanting dopants (82) into the third region (24) to form disparate source and drain features (84) for the third device (110).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.