Fin PIN diode

US7560784B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kangguo Cheng · Schenectady, US
• Louis L. Hsu · Fishkill, US
• Jack A. Mandelman · Stormville, US

Key dates

• Filing date: Feb 1, 2007
• Grant date: Jul 14, 2009
• Expiry date: May 20, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/23

Abstract

Embodiments of the invention generally relate to the field of semiconductor devices, and more specifically to fin-based junction diodes. A portion of a doped semiconductor fin may protrude through a first doped layer. An intrinsic layer may be disposed on the protruding semiconductor fin. A second semiconductor layer may be disposed on the intrinsic layer, thereby forming a PIN diode compatible with FinFET technology and having increased junction area.